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Samsung 128GB DDR5-5600 | 3DS ECC RDIMM Server Memory

The 128GB DIMM That Takes a 2-Socket Server From 4 TB para 8 TB Without Changing Anything ElseA dual-socket Dell R760 has 32 Slots DIMM. Populate all 32 with 64GB DIMMs and you get 2 tb. Populate them with 128GB 3DS RDIMMs and you get 4 tb. With 256GB 3DS DIMMs, 8 tb. The Samsung 128GB DDR5-5600 3DS RDIMM is the middle step — the density that turns a memory-hungry virtualization host or an in-memory database server from "can't fit the workload" para "has headroom for growth." It is a 3D-stacked (TSV, through-silicon via) registered DIMM with 4 ranks, ECC, and on-die thermal sensors — the densest standard form factor before stepping up to the 256GB tier.Technical SpecificationsParameterSpecificationCapacity128 GB per

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The 128GB DIMM That Takes a 2-Socket Server From 4 TB para 8 TB Without Changing Anything Else

A dual-socket Dell R760 has 32 Slots DIMM. Populate all 32 with 64GB DIMMs and you get 2 tb. Populate them with 128GB 3DS RDIMMs and you get 4 tb. With 256GB 3DS DIMMs, 8 tb. The Samsung 128GB DDR5-5600 3DS RDIMM is the middle step — the density that turns a memory-hungry virtualization host or an in-memory database server fromcan’t fit the workload” para “has headroom for growth.It is a 3D-stacked (TSV, through-silicon via) registered DIMM with 4 ranks, ECC, and on-die thermal sensors — the densest standard form factor before stepping up to the 256GB tier.

Especificações técnicas

Parâmetro Especificação
Capacidade 128 GB para DIMM
Tipo DDR5 SDRAM, Registered (RDIMM), 3DS (3D Stacked, TSV), ECC
Speed 5600 Mt/s (PC5-44800)
CAS Latency CL46 (CL46-46-46 at 5600 Mt/s)
Organization 4Rx4 (quad-rank, x4 DRAM devices, 3D-stacked via TSV)
Tensão 1.1V VDD, 1.8V VPP
DRAM Process Samsung 1a-class (14nm) DDR5 DRAM
Stacking TSV (Through-Silicon Via) 3D stacking — 8 DRAM dies stacked per module
On-Die ECC Sim (DDR5 standard)
Sideband ECC Sim (standard ECC across data bus)
Temperature Sensor Integrated SPD thermal sensor (I2C, read by iDRAC/iBMC)
PMIC On-DIMM Power Management IC
Fator de forma 288-pin DDR5 RDIMM, standard height (31.25 milímetros)
Físico 133.35 x 31.25 milímetros, ~21g
Temperatura 0C to 85C
Qualified Platforms (Dell) PowerEdge R660, R760, R770, R860, R960 (4th/5th Gen Xeon)
Qualified Platforms (xFusion) Fusionserver 2288h V7, 2488H V7, 5288 V7, 5885H V7
Garantia 3-ano (with server)

Memory Density Configuration Guide

Servidor DIMM Slots 64GB Rdimm (1DPC) 128GB 3DS RDIMM (1DPC) 256GB 3DS RDIMM (1DPC) Max with 2DPC
Dell R470 (1-tomada) 16 512 GB 1 tb 2 tb 4 tb
Dell R660/R760/R770 (2-tomada) 32 1 tb 2 tb 4 tb 8 tb
Dell R860 / xFusion 2488H V7 (4-tomada) 64 2 tb 4 tb 8 tb 16 tb
Dell R7715 (1-socket EPYC) 24 768 GB 1.5 tb 3 tb 6 tb

3DS Stacking Explained — Why 128GB Costs More Than Two 64GB DIMMs But Is Worth It

A standard 64GB RDIMM has DRAM chips on two sides of the module (dual-rank). A 128GB 3DS RDIMM stacks DRAM dies vertically using through-silicon vias — 8 dies stacked per module with vertical interconnects. This achieves higher capacity in the same form factor, but the TSV process is more expensive to manufacture, which is why 128GB 3DS costs more than 2x 64GB RDIMMs. The value proposition: a 2-socket server has a fixed 32 Slots DIMM. Populating 2x 64GB per slot is impossible — the slot holds one DIMM. 3DS stacking is the only path to 2 TB+ per node on a dual-socket platform.

Plataformas Compatíveis

DDR5-5600 4Rx4 3DS RDIMM. Compatible with Dell PowerEdge 16th Gen (R660, R760, R770, R860, R960) and xFusion FusionServer V7. Verify platform QVL for the specific part number. At 1DPC (1 DIMM per channel), the 128GB 3DS RDIMM runs at DDR5-5600. At 2DPC, speed drops to 4400 Mt/s (platform-dependent). Do not mix 128GB 3DS RDIMMs with 64GB RDIMMs on the same channel — rank count mismatch forces both to train down.

Fonte através de Xincuan

We supply Samsung 128GB DDR5-5600 3DS RDIMMs pre-installed in Dell and xFusion servers with factory-direct pricing, 3-ano de garantia, e envio global. Our engineers populate DIMMs per the platform optimal population guide.

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