Serveur Xinchuan | Fournisseur de matériel de serveur d'entreprise
| Numéro de pièce | Capacité | Détails |
| 0251Y129 | 128Go | Module de mémoire générale,2288H V7, module de mémoire,DDR5, RDIMM,128Go,288broche,0.42ns,4800000KHz,1.1V,CCE,4Rang(4G*4bit),3DS,Domestique&Outre-mer |
| 0251Y129 | 128Go | Module de mémoire générale,2288H V7, module de mémoire,DDR5, RDIMM,128Go,288broche,0.42ns,4800000KHz,1.1V,CCE,4Rang(4G*4bit),3DS,Domestique&Outre-mer |
| 0620Y009 | 128Go | Module de mémoire,DDR5-RDIMM,128Go,288broche,0.42ns,4800000KHz,1.1V,CCE,4Rang(4G*4bit),3DS |
| 0620Y009 | 128Go | Module de mémoire,DDR5-RDIMM,128Go,288broche,0.42ns,4800000KHz,1.1V,CCE,4Rang(4G*4bit),3DS |
| 0620Y009-001 | 128Go | Module de mémoire,DDR5-RDIMM,128Go,288broche,0.42ns,4800000KHz,1.1V,CCE,4Rang(4G*4bit),3DS,SAMSUNG 1ynm |
| 0620Y033 | 128Go | Module de mémoire,DDR5-RDIMM,128Go,288broche,0.357ns,5600000KHz,1.1V,CCE,4Rang(4G*4bit),3DS |
| 0251Y064 | 16Go | Module de mémoire générale,2288H V7, module de mémoire,DDR5-RDIMM,16Go,288broche,0.42ns,4800000KHz,1.1V,CCE,1Rang(2G*8bit),Outre-mer |
| 0251Y146 | 16Go | Module de mémoire générale,2288H V7, module de mémoire,DDR5-RDIMM,16Go,288broche,0.42ns,4800000KHz,1.1V,CCE,1Rang(2G*8bit),0620Y003-XH-JWY SAMSUNG 1ynm |
| 0251Y150 | 16Go | Module de mémoire générale,2288H V7, module de mémoire,DDR5-RDIMM,16Go,288broche,0.357ns,5600000KHz,1.1V,CCE,1Rang(2G*8bit),Outre-mer |
| 0620Y003 | 16Go | Module de mémoire,DDR5-RDIMM,16Go,288broche,0.42ns,4800000KHz,1.1V,CCE,1Rang(2G*8bit) |
| 0620Y003-001 | 16Go | Module de mémoire,DDR5-RDIMM,16Go,288broche,0.42ns,4800000KHz,1.1V,CCE,1Rang(2G*8bit),P/N spécifié dédié-Samsung 1ynm |
| 0620Y003-002 | 16Go | Module de mémoire,DDR5-RDIMM,16Go,288broche,0.42ns,4800000KHz,1.1V,CCE,1Rang(2G*8bit),P/N spécifié dédié-Hynix 1anm |
| 0620Y027 | 16Go | Module de mémoire,DDR5-RDIMM,16Go,288broche,0.357ns,5600000KHz,1.1V,CCE,1Rang(2G*8bit) |
| 0620Y068 | 16Go | Module de mémoire,DDR5-RDIMM,16Go,288broche,0.42ns,4800000KHz,1.1V,CCE,1Rang(2G*8bit),Code de spécification |
| 0620Y010 | 256Go | Module de mémoire,DDR5-RDIMM,256Go,288broche,0.42ns,4800000KHz,1.1V,CCE,8Rang(8G*4bit),3DS |
| 0251Y063 | 32Go | Module de mémoire générale,2288H V7, module de mémoire,DDR5-RDIMM,32Go,288broche,0.42ns,4800000KHz,1.1V,2Rang(2G*8bit),Outre-mer |
| 0251Y063 | 32Go | Module de mémoire générale,2288H V7, module de mémoire,DDR5-RDIMM,32Go,288broche,0.42ns,4800000KHz,1.1V,2Rang(2G*8bit),Outre-mer |
| 0251Y143 | 32Go | Module de mémoire générale,2258 V7, module de mémoire,DDR5-RDIMM,32Go,288broche,0.357ns,5600000KHz,1.1V,CCE,2Rang(2G*8bit),Code de trois usines d'origine,Exclusivité outre-mer |
| 0620Y005 | 32Go | Module de mémoire,DDR5-RDIMM,32Go,288broche,0.42ns,4800000KHz,1.1V,2Rang(2G*8bit) |
| 0620Y005-001 | 32Go | Module de mémoire,DDR5-RDIMM,32Go,288broche,0.42ns,4800000KHz,1.1V,2Rang(2G*8bit),P/N spécifié dédié-Samsung 1ynm |
| 0620Y005-002 | 32Go | Module de mémoire,DDR5-RDIMM,32Go,288broche,0.42ns,4800000KHz,1.1V,2Rang(2G*8bit),P/N spécifié dédié-Hynix 1anm |
| 0620Y029 | 32Go | Module de mémoire,DDR5-RDIMM,32Go,288broche,0.357ns,5600000KHz,1.1V,CCE,2Rang(2G*8bit) |
| 0620Y029-001 | 32Go | Module de mémoire,DDR5-RDIMM,32Go,288broche,0.357ns,5600000KHz,1.1V,CCE,2Rang(2G*8bit),SK Hynix 1anm,P/N spécifié dédié |
| 0620Y029-002 | 32Go | Module de mémoire,DDR5-RDIMM,32Go,288broche,0.357ns,5600000KHz,1.1V,CCE,2Rang(2G*8bit),P/N spécifié dédié Samsung 1anm |
| 0620Y069 | 32Go | Module de mémoire,DDR5-RDIMM,32Go,288broche,0.42ns,4800000KHz,1.1V,CCE,2Rang(2G*8bit),Code de spécification |
| 0620Y071 | 32Go | Module de mémoire,DDR5-RDIMM,32Go,288broche,0.357ns,5600000KHz,1.1V,CCE,2Rang(2G*8bit),Code de spécification |
| 0620Y019 | 48Go | Module de mémoire,DDR5-RDIMM,48Go,288broche,0.416ns,4800000KHz,1.1V,CCE,2Rang(3G*8bit) |
| 0620Y030 | 48Go | Module de mémoire,DDR5-RDIMM,48Go,288broche,0.357ns,5600000KHz,1.1V,2Rang(3G*8bit) |
| 0251Y062 | 64Go | Module de mémoire générale,2288H V7, module de mémoire,DDR5-RDIMM,64Go,288broche,0.42ns,4800000KHz,1.1V,CCE,2Rang(4G*4bit),Outre-mer |
| 0251Y144 | 64Go | Module de mémoire générale,2258 V7, module de mémoire,DDR5-RDIMM,64Go,288broche,0.357ns,5600000KHz,1.1V,CCE,2Rang(4G*4bit),Code de trois usines d'origine,Exclusivité outre-mer |
| 0620Y006 | 64Go | Module de mémoire,DDR5-RDIMM,64Go,288broche,0.42ns,4800000KHz,1.1V,CCE,2Rang(4G*4bit) |
| 0620Y006-001 | 64Go | Module de mémoire,DDR5-RDIMM,64Go,288broche,0.42ns,4800000KHz,1.1V,CCE,2Rang(4G*4bit),P/N spécifié dédié-Samsung 1ynm |
| 0620Y006-002 | 64Go | Module de mémoire,DDR5-RDIMM,64Go,288broche,0.42ns,4800000KHz,1.1V,CCE,2Rang(4G*4bit),P/N spécifié dédié-Hynix 1anm |
| 0620Y006-006 | 64Go | Module de mémoire,DDR5-RDIMM,64Go,288broche,0.42ns,4800000KHz,1.1V,CCE,2Rang(4G*4bit),Code de trois usines d'origine |
| 0620Y031 | 64Go | Module de mémoire,DDR5-RDIMM,64Go,288broche,0.357ns,5600000KHz,1.1V,CCE,2Rang(4G*4bit) |
| 0620Y031-003 | 64Go | Module de mémoire,DDR5-RDIMM,64Go,288broche,0.357ns,5600000KHz,1.1V,CCE,2Rang(4G*4bit),SAMSUNG 1 an |
| 0620Y031-004 | 64Go | Module de mémoire,DDR5-RDIMM,64Go,288broche,0.357ns,5600000KHz,1.1V,CCE,2Rang(4G*4bit),SK Hynix 1anm |
| 0620Y070 | 64Go | Module de mémoire,DDR5-RDIMM,64Go,288broche,0.42ns,4800000KHz,1.1V,CCE,2Rang(4G*4bit),Code de spécification |
| 0620Y072 | 64Go | Module de mémoire,DDR5-RDIMM,64Go,288broche,0.357ns,5600000KHz,1.1V,CCE,2Rang(4G*4bit),Code de spécification |
| 0620Y026 | 96Go | Module de mémoire,DDR5-RDIMM,96Go,288broche,0.416ns,4800000KHz,1.1V,CCE,2Rang(6G*4bit) |
| 0620Y032 | 96Go | Module de mémoire,DDR5-RDIMM,96Go,288broche,0.357ns,5600000KHz,1.1V,CCE,2Rang(6G*4bit) |
| 0620Y032 | 96Go | Module de mémoire,DDR5-RDIMM,96Go,288broche,0.357ns,5600000KHz,1.1V,CCE,2Rang(6G*4bit) |